MTP30P06V

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

2

4

6

8

10

0

10

20

30

60

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

0

1

2

3

4

8

0

10

20

30

60

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

10

20

30

40

50

0

0.02

0.04

0.06

0.12

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0

10

20

30

40

70

1

50

10

100

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 125°C

100

°C

TJ = 25°C

VDS ≥ 10 V

TJ = –55°C

25

°C

100

°C

TJ = 100°C

25

°C

– 55

°C

VGS = 0 V

VGS = 10V

VGS = 10 V

40

50

12

7 V

6 V

5 V

4 V

8 V

9 V

40

50

5

6

7

0.08

0.1

60

60

0

10

20

30

40

60

0.04

0.05

0.08

ID, DRAIN CURRENT (AMPS)

15 V

TJ = 25°C

VGS = 10 V

0.06

0.07

50

–50

0

0.2

0.4

0.6

1.8

TJ, JUNCTION TEMPERATURE (°C)

–25

0

25

50

75

100

150

VGS = 10 V

ID = 15 A

0.8

1

1.2

1.4

1.6

125

175