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2SC2786 Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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2SC2786 Datasheet(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1 / 1 page ![]() WEJ ELECTRONIC CO.,LTD 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 50 V Collector-Emitter Voltage Vceo 45 V Emitter-Base Voltage Vebo 5 V Collector Current Ic 100 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 1.BASE 2.EMITTER 3.COLLECTOR 1. 1.3 2.4 U nit:m m ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage BVcbo 50 V Ic=100uA Ie=0 Collector-Emitter Breakdown Voltage# BVceo 45 V Ic= 1mA Ib=0 Emitter-Base Breakdown Voltage BVebo 5 V Ie= 100uA Ic=0 Collector-Base Cutoff Current Icbo 50 nA Vcb= 50V Ie=0 Emitter-Base Cutoff Current Iebo 50 nA Veb= 5V Ic= 0 DC Current Gain Hfe 60 300 1000 Vce= 5V Ic= 1mA Collector-Emitter Saturation Voltage Vce(sat) 0.3 V Ic= 100mA Ib= 5mA Base-Emitter Saturation Voltage Vbe(sat) 1.00 V Ic= 100mA Ib= 5mA Base-Emitter on Voltage Vbe(on) 0.58 0.63 o.7 V Vce= 5V Ic= 2mA Output Capacitance Cob 2.2 3.5 PF Vcb= 10V Ie=0 f=1MHz Current Gain-Bandwidth Product fT 150 270 MHz Vce= 5V Ic= 10mA Noise Figure NF 10 dB Vce= 5V Ic= 0.2mA f=1KHz Rs=2Kohm * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: 2SC2786=L6,F1X Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS |
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