STL8N80K5 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STL8N80K5

4/17

DocID024079 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

800

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 800 V

µA

VDS = 800 V, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 3 A

0.80

0.95

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

450

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-1

Co(tr)

(1)

1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging

time as Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 640 V, VGS = 0

-57

Co(er)

(2)

2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored

energy as Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-24

Intrinsic gate

resistance

f = 1 MHz, ID=0

Ω

Total gate charge

VDD = 640 V, ID = 6 A,

VGS = 10 V

(see Figure 16)

-16.5

Qgs

Gate-source charge

3.2

Qgd

Gate-drain charge

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