STGP35HF60W datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STGP35HF60W

4/13

Doc ID 023894 Rev 1

Electrical characteristics

TJ = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter

saturation voltage

VGE = 15 V, IC= 20 A

2.5

VGE = 15V, IC = 20 A,TJ= 125 °C

1.65

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TJ = 125 °C

250

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

± 100

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

2400

235

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 400 V, IC = 20 A,

VGE = 15 V,

(see Figure 16)

140

STGP35HF60W Datasheet(PDF) 4 Page - STMicroelectronics

STGP35HF60W Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL