STF13N80K5 datasheet(3/20 Pages) STMICROELECTRONICS

Part #	STF13N80K5

Description	N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D짼PAK, TO-220FP and TO-220 packages

PDF	20 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 20 page

DocID024348 Rev 3

3/20

STB13N80K5, STF13N80K5, STP13N80K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK, TO-220

TO-220FP

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

12(1)

Limited by package.

Drain current (continuous) at TC = 100 °C

7.6

7.6 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

48 (1)

PTOT

Total dissipation at TC = 25 °C

190

IAR

Max current during repetitive or single

pulse avalanche

(pulse width limited by Tjmax )

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

148

Viso

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;TC=25 °C)

2500

dv/dt (3)

ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt(4)

VDS ≤ 640 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D²PAK

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case max

0.66

3.57

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

Rthj-pcb(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-pcb max

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