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MP20051DN Datasheet(PDF) 2 Page - Monolithic Power Systems

Part # MP20051DN
Description  Low Noise, High PSRR, 1A Linear Regulator
PDF  12 Pages
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Manufacturer  MPS [Monolithic Power Systems]
Direct Link  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP20051DN Datasheet(HTML) 2 Page - Monolithic Power Systems

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MP20051 – LOW NOISE HIGH PSRR 1A LINEAR REGULATOR
MP20051 Rev.1.11
www.MonolithicPower.com
2
12/26/2013
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2013 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number
Package
Top Marking
Free Air Temperature (TA)
MP20051DQ*
QFN8 (3 x 3mm)
ABR
MP20051DN**
SOIC8E
MP20051
-40°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP20051DQ–Z);
For RoHS Compliant Packaging, add suffix –LF (e.g. MP20051DQ–LF–Z)
** For Tape & Reel, add suffix –Z (e.g. MP20051DN–Z);
For RoHS Compliant Packaging, add suffix –LF (e.g. MP20051DN–LF–Z)
PACKAGE REFERENCE
TOP VIEW
OUT
OUT
FB
GND
1
2
3
4
IN
IN
NC
EN
8
7
6
5
EXPOSED PAD
ON BACKSIDE
CONNECT TO GND
OUT
OUT
FB
GND
IN
IN
NC
EN
1
2
3
4
8
7
6
5
TOP VIEW
EXPOSED PAD
ON BACKSIDE
CONNECT TO GND
QFN8 (3 x 3mm)
SOIC8E
ABSOLUTE MAXIMUM RATINGS
(1)
VIN, EN, FB to GND .......................-0.3V to +6V
OUT to GND ...................... -0.5V to (VIN + 0.5V)
Continuous Power Dissipation ......(TA=25°C)
(2)
QFN8 (3x3mm)................................................2.0W
SOIC8E ............................................................2.0W
Junction Temperature...............................150
°C
Storage Temperature Range ..... -65°C to 150°C
Lead Temperature (Soldering, 10sec)...........260°C
ESD SUSCEPTIBILITY
(3)
HBM (Human Body Mode).......................... 2kV
MM (Machine Mode) ................................. 200V
Recommended Operating Conditions
(4)
Supply Input Voltage.......................2.5V to 5.5V
Enable Input Voltage .........................0V to 5.5V
Operating Junction Temp. (TJ). -40°C to +125°C
Thermal Resistance
(5)
θJA
θJC
QFN8 (3x3mm) .......................50 ...... 12 ... °C/W
SOIC8E...................................50 ...... 10 ... °C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ (MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD (MAX) = (TJ
(MAX)-TA)/θJA. Exceeding the maximum allowable power
dissipation will cause excessive die temperature, and the
regulator will go into thermal shutdown. Internal thermal
shutdown circuitry protects the device from permanent
damage.
3) Devices
are
ESD
sensitive.
Handling
precaution
recommended.
4) The device is not guaranteed to function outside of its
operating conditions.
5) Measured on JESD51-7, 4-layer PCB.



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