2STBN15D100 datasheet(3/7 Pages) STMICROELECTRONICS

Part #	2STBN15D100

Description	Low voltage NPN power Darlington transistor

PDF	7 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2STBN15D100

Electrical characteristics

Doc ID 16117 Rev 2

3/7

Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 100 V

100

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 50 V

100

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

0.12

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

sustaining voltage (IB = 0)

IC = 100 mA

100

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.5 A

IB = 1 mA

IC = 4 A

_ IB = 4 mA

1.5

1.3

VBE(on)

(1)

Base-emitter on voltage

IC = 3 A

_ VCE = 3 V

2.5

hFE

(1)

DC current gain

IC = 3 A

VCE = 3 V

750

Diode forward voltage

IF = 3 A

2.5

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