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2STBN15D100T4 Datasheet(PDF) 1 Page - STMicroelectronics |
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2STBN15D100T4 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  January 2010 Doc ID 16117 Rev 2 1/7 7 2STBN15D100 Low voltage NPN power Darlington transistor Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Figure 1. Internal schematic diagrams 1 3 D²PAK TAB R1 = 8 kΩ R2 = 150 Ω Table 1. Device summary Order code Marking Package Packaging 2STBN15D100T4 BN15D100 D²PAK Tape and reel www.st.com |
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