STM8S103F3P3TR datasheet(69/113 Pages) STMICROELECTRONICS

Part #	STM8S103F3P3TR

Description	Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I²C

PDF	113 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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69 / 113 page

Unit

Max

Typ

Min

(1)

Conditions

Parameter

Symbol

TRET = 85°C

Data retention (data

memory) after 300k

erase/write cycles at

TA = +125 °C

Supply current (Flash

programming or erasing

IDD

for 1 to 128 bytes)

(1) Data based on characterization results, not tested in production.

(2) The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes

even when a write/erase operation addresses a single byte.

I/O port pin characteristics

10.3.6

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All unused

pins must be kept at a fixed voltage: using the output mode of the I/O for example or an

external pull-up or pull-down resistor.

Table 38: I/O static characteristics

Unit

Max

Typ

Min

Conditions

Parameter

Symbol

0.3 x

VDD

-0.3 V

VDD = 5 V

Input low level voltage

VIL

VDD +

0.3

0.7 x

VDD

Input high level voltage

VIH

700

Hysteresis

(1)

Vhys

kΩ

VDD = 5 V, VIN = VSS

Pull-up resistor

Rpu

(2)

Fast I/Os

Load = 50 pF

Rise and fall time

(10 % - 90 %)

tR, tF

125

(2)

Standard and high sink

I/Os

Load = 50 pF

μA

±1

(2)

VSS ≤ VIN ≤VDD

Digital input leakage current

Ilkg

69/113

DocID15441 Rev 6

Electrical characteristics

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STM8S103F3P3TR Datasheet(PDF) 69 Page - STMicroelectronics

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