STP5NK65ZFP datasheet(3/12 Pages) STMICROELECTRONICS

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STP5NK65ZFP

Electrical characteristics

Doc ID 15565 Rev 1

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Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID =1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS=max rating

VDS=max rating @125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2.1 A

1.5

1.8

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward transconductance VDS =10 V, ID = 2.1 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1MHz,

VGS = 0

680

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 4.5 A,

VGS = 10 V

Figure 16

4.4

13.7

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 325 V, ID = 2.1 A,

RG = 4.7 Ω, VGS = 10 V

Figure 15

140

tr(Voff)

Off-voltage rise time

Fall time

Cross-over time

VDD = 325 V, ID = 2.1 A,

RG =4.7 Ω, VGS = 10 V

Figure 15

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