STP80N20M5 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STB80N20M5, STP80N20M5

4/14

Doc ID 15734 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

200

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 30.5 A

0.019

0.023

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

4329

275

Co(tr)

(1)

Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance time

VDS = 0 to 160 V, VGS = 0

-709

Co(er)

(2)

Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance energy

-280

Intrinsic gate

resistance

f = 1 MHz open drain

1.9

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160 V, ID = 30.5 A,

VGS = 10 V

(see

Figure 15)

104

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