STW25N95K3 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STW25N95K3

4/13

Doc ID 15584 Rev 2

Electrical characteristics

(Tcase =25°C unless otherwise specified).

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

950

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 150 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 11 A

0.32

0.36

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 15 V, ID = 11 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

3680

246

Co(tr)

(2)

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 760 V, VGS = 0

198

Co(er)

(3)

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

VDS = 0 to 760 V, VGS = 0

278

Gate input resistance

f=1 MHz open drain

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 760 V, ID = 22 A,

VGS = 10 V

(see Figure 16)

105

STW25N95K3 Datasheet(PDF) 4 Page - STMicroelectronics

STW25N95K3 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL