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BAV99 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BAV99 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 14 page ![]() 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data [1] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA. BAV99 series High-speed switching diodes Rev. 8 — 18 November 2010 Product data sheet Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small High switching speed: trr ≤ 4ns Low capacitance: Cd ≤ 1.5 pF Low leakage current Reverse voltage: VR ≤ 100 V Small SMD plastic packages AEC-Q101 qualified High-speed switching Reverse polarity protection General-purpose switching Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IR reverse current VR =80V - - 0.5 μA VR reverse voltage - - 100 V trr reverse recovery time [1] -- 4 ns |
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