www.irf.com

1

12/06/08

IRFS4227PbF

IRFSL4227PbF

Notes

 through † are on page 8

PDP SWITCH

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

200

V

240

V

22

m

:

130

A

175

°C

Key Parameters

Features

l

Advanced Process Technology

l

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

l

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

l

l

High Repetitive Peak Current Capability for

Reliable Operation

l

Short Fall & Rise Times for Fast Switching

l

175°C Operating Junction Temperature for

Improved Ruggedness

l

Repetitive Avalanche Capability for

Robustness and Reliability

GD

S

Gate

Drain

Source

S

D

G

IRFS4227PbF

TO-262

IRFSL4227PbF

S

D

G

S

D

G

D

D

Absolute Maximum Ratings

Parameter

Units

Gate-to-Source Voltage

V

Pulsed Drain Current c

Repetitive Peak Current

g

Power Dissipation

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

N

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case f

–––

0.45*

h

–––

40

A

W

°C

130

300

-40 to + 175

10lbfxin (1.1Nxm)

330

190

2.2

Max.

44

260

62

±30

applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to

175°C operating junction temperature and high repetitive peak current capability. These features

combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications

Description

PD - 96131A