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LPC2131FBD64/01 Datasheet(PDF) 27 Page - NXP Semiconductors |
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LPC2131FBD64/01 Datasheet(HTML) 27 Page - NXP Semiconductors |
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27 / 45 page ![]() LPC2131_32_34_36_38 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 2 February 2011 27 of 45 NXP Semiconductors LPC2131/32/34/36/38 Single-chip 16/32-bit microcontrollers 8. Static characteristics Table 6. Static characteristics Tamb = −40 °C to +85 °C for commercial applications, unless otherwise specified. Symbol Parameter Conditions Min Typ[1] Max Unit VDD supply voltage (core and external rail) 3.0 3.3 3.6 V VDDA analog 3.3 V pad supply voltage 2.5 3.3 3.6 V Vi(VBAT) input voltage on pin VBAT [2] 2.0 3.3 3.6 V Vi(VREF) input voltage on pin VREF 2.5 3.3 3.6 V Standard port pins, RESET, RTCK IIL LOW-level input current VI = 0 V; no pull-up - - 3 μA IIH HIGH-level input current VI =VDD; no-pull-down - - 3 μA IOZ OFF-state output current VO =0V; VO =VDD; no pull-up/down -- 3 μA Ilatch I/O latch-up current −(0.5V DD) < VI < (1.5VDD); Tj <125 °C - - 100 mA VI input voltage pin configured to provide a digital function [3][4][5] [6] 0- 5.5 V VO output voltage output active 0 - VDD V VIH HIGH-level input voltage 2.0 - - V VIL LOW-level input voltage - - 0.8 V Vhys hysteresis voltage 0.4 - - V VOH HIGH-level output voltage IOH = −4 mA [7] VDD − 0.4 - - V VOL LOW-level output voltage IOL = −4 mA [7] -- 0.4 V IOH HIGH-level output current VOH =VDD − 0.4 V [7] −4- - mA IOL LOW-level output current VOL = 0.4 V [7] 4- - mA IOHS HIGH-level short-circuit output current VOH =0 V [8] -- −45 mA IOLS LOW-level short-circuit output current VOL =VDDA [8] -- 50 mA Ipd pull-down current VI =5V [9] 10 50 150 μA Ipu pull-up current VI =0 V [10] −15 −50 −85 μA VDD < VI < 5 V [9] 00 0 μA IDD(act) active mode supply current VDD = 3.3 V; Tamb =25 °C; code while(1){} executed from flash, no active peripherals CCLK = 10 MHz - 10 - mA CCLK = 60 MHz - 40 - mA IDD(pd) Power-down mode supply current VDD = 3.3 V; Tamb =25 °C- 60 - μA VDD = 3.3 V; Tamb =85 °C - 200 500 μA |
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