BCW60C datasheet(3/6 Pages) PHILIPS

3 / 6 page

1999 Apr 22

NXP Semiconductors

Product data sheet

NPN general purpose transistors

BCW60 series

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 32 V

−

IE = 0; VCB = 32 V; Tamb = 150 °C −

−

μA

IEBO

emitter cut-off current

IC = 0; VEB = 4 V

−

hFE

DC current gain

IC = 10 μA; VCE = 5 V

BCW60B

−

BCW60C

−

BCW60D

100

−

DC current gain

IC = 2 mA; VCE = 5 V

BCW60B

180

−

310

BCW60C

250

−

460

BCW60D

380

−

630

DC current gain

IC = 50 mA; VCE = 1 V

BCW60B

−

BCW60C

−

BCW60D

100

−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.25 mA

−

350

IC = 50 mA; IB = 1.25 mA

100

−

550

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.25 mA

600

−

850

IC = 50 mA; IB = 1.25 mA

0.7

−

1.05

VBE

base-emitter voltage

IC = 10 μA; VCE = 5 V

−

520

−

IC = 2 mA; VCE = 5 V

550

650

750

IC = 50 mA; VCE = 1 V

−

780

−

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

1.7

−

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz −

−

transition frequency

IC = 10 mA; VCE = 5 V;

f = 100 MHz; note 1

100

250

−

MHz

noise figure

IC = 200 μA; VCE = 5 V;

RS = 2 kΩ; f = 1 kHz; B = 200 Hz

−

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