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SPN3402WS23RG Datasheet(PDF) 3 Page - SYNC POWER Crop. |
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SPN3402WS23RG Datasheet(HTML) 3 Page - SYNC POWER Crop. |
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3 / 8 page ![]() 2012/11/08 Ver.1 Page 3 SPN3402W N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unles ℃ s otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.8 1.6 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0.0V 1 uA VDS=24V,VGS=0.0V TJ=55℃ 10 On-State Drain Current ID(on) VDS≧4.5V,VGS=10V 6 A VDS≧4.5V,VGS=4.5V 4 Drain-Source On-Resistance RDS(on) VGS = 10V,ID=2.8A 0.048 0.058 Ω VGS =4.5V,ID=2.3A 0.053 0.065 VGS =2.5V,ID=1.5A 0.080 0.105 Forward Transconductance gfs VDS=4.5V,ID=2.8A 4.6 S Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.82 1.2 V Dynamic Total Gate Charge Qg VDS=15,VGS=4.5V ID≡2.0A 4.2 6 nC Gate-Source Charge Qgs 0.6 Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss VDS=15,VGS=0V f =1MHz 350 pF Output Capacitance Coss 55 Reverse Transfer Capacitance Crss 41 Turn-On Time td(on) VDD=15,RL=10Ω VGEN=10V,RG=3Ω 2.5 ns tr 2.5 Turn-Off Time td(off) 20 tf 4 |
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