TSM10P06 datasheet(2/4 Pages) TSC

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TSM10P06

60V P-Channel MOSFET

2/4

Version: B13

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

-60

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

-1

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -60V, VGS = 0V

IDSS

-1

µA

On-State Drain Current

VDS = -5V, VGS = -10V

ID(ON)

-10

Drain-Source On-State Resistance

VGS = -10V, ID = -5A

RDS(ON)

130

170

mΩ

VGS = -4.5V, ID = -2A

170

220

Forward Transconductance

VDS = -15V, ID = -3.5A

gfs

Diode Forward Voltage

IS = -2.5A, VGS = 0V

VSD

-1.25

-1.5

Dynamic

Total Gate Charge

VDS = -15V, ID = -3.5A,

VGS = -10V

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

1.5

Input Capacitance

VDS = -30V, VGS = 0V,

f = 1.0MHz

Ciss

540

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

VDD = -15V, RL = 15Ω,

ID = -1A, VGEN = -10V,

RG = 6Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%

Notes 2: L=0.1mH,

Notes 3: For DESIGN AID ONLY, not subject to production testing.

Notes 4: Switching time is essentially independent of operating temperature.

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