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CSD19501KCS Datasheet(PDF) 4 Page - Texas Instruments

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Part # CSD19501KCS
Description  CSD19501KCS, 80 V N-Channel NexFET Power MOSFETs
PDF  10 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19501KCS Datasheet(HTML) 4 Page - Texas Instruments

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−75 −50 −25
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TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID =60A
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
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TC - Case Temperature (ºC)
ID = 250uA
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 60A
TC = 125°C,I D = 60A
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Qg - Gate Charge (nC)
ID = 60A
VDS = 40V
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19501KCS
SLPS478 – JANUARY 2014
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
4
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Product Folder Links: CSD19501KCS



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