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ISO508P Datasheet(PDF) 3 Page - Burr-Brown (TI) |
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ISO508P Datasheet(HTML) 3 Page - Burr-Brown (TI) |
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3 / 6 page ![]() 3 ® ISO508 PACKAGE DRAWING PRODUCT PACKAGE NUMBER(1) ISO508P 24-Pin Plastic DIP 167 ISO508P-U 24-Pin Gull Wing Surface Mount 167-4 NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. NAME FUNCTION DIN (0 - 7) Input Data Bus. Inputs are CMOS/TTL compatible. DOUT (0 - 7) Output Data Bus. Outputs are TTL compatible. LEI Input Latch Enable. Latch enable signal for the input data buffer. A logic LOW will latch the input data preventing further changes being made before data transmission across the barrier, and transmit if in synchronous mode. A logic HIGH will allow the data to pass from the input pins to the input buffer. LEO Output Latch Enable. Latch enable signal for the output data buffer. A logic LOW will latch the internal data to the output pins and prevent further changes to the output data. A logic HIGH will allow the internal data to be passed to the output pins as soon as it becomes avail- able. CONT Synchronous/Asynchronous Mode Select. A logic HIGH selects asynchronous mode. A logic LOW selects syn- chronous mode. OE Output Tri-State Enable. Makes the output data pins high impedance to allow multiple parallel access to the data bus. A logic HIGH will make DOUT (0 - 7) high impedance. A logic LOW will allow DOUT (0 - 7) to be driven to the correct logic level. PIN CONFIGURATION Top View DIP FUNCTIONAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Supply Voltage: VSA ............................................................. –0.5V to +6V VSB ............................................................. –0.5V to +6V Maximum Input Current, any Input Pin ............................................. 20mA Continuous Isolation Voltage ..................................................... 1500Vrms Storage Temperature ...................................................... –40 °C to +125°C Lead Temperature (soldering, 10s) ............................................... +260 °C PACKAGE INFORMATION ELECTROSTATIC DISCHARGE SENSITIVITY Electrostatic discharge can cause damage ranging from per- formance degradation to complete device failure. Burr- Brown Corporation recommends that all integrated circuits be handled and stored using appropriate ESD protection methods. ESD damage can range from subtle performance degrada- tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published specifications. 1 2 3 4 5 6 7 8 9 10 11 12 V SA CONT D IN0 D IN1 D IN2 D IN3 D IN4 D IN5 D IN6 D IN7 LEI GND A GND B LEO D OUT0 D OUT1 D OUT2 D OUT3 D OUT4 D OUT5 D OUT6 D OUT7 OE V SB 24 23 22 21 20 19 18 17 16 15 14 13 ISO508 |
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