SST440 / SST441

CORPORATION

Parameter/Test Condition

Symbol

Limit

Unit

Gate-Drain Voltage

-25

V

Gate-Source Voltage

-25

V

Forward Gate Current

50

mA

Power Dissipation

(per side)

300

mW

(total)

500

mW

Power Derating

(per side)

2.4

mW/

(total)

4

mW/

Operating Junction Temperature

-55 to 150

Storage Temperature

-55 to 150

Lead Temperature (1/16" from case for 10 seconds)

300

SYMBOL

CHARACTERISTCS

TYP

1

SST440

SST441

UNIT

TEST CONDITIONS

MIN

MAX

MIN

MAX

STATIC

Gate-Source Breakdown Voltage

-35

-25

-25

V

Gate-Source Cut off Voltage

-3.5

-1

-6

-1

-6

Saturation Drain Current

2

15

6

30630

mA

Gate Reverse Current

-1

-500

-500

pA

-0.2

nA

Gate Operating Current

-1

-500

-500

pA

-0.2

nA

Gate-Source Forward Voltage

0.7

V

DYNAMIC

Common-Source Forward Transconductance

6

4.5

9

4.5

9

mS

f = 1kHz

Common-Source Output Conductance

20

200

200

µS

Common-Source Forward Transconductance

5.5

mS

f = 100MHz

Common-Source Output Conductance

30

µS

Common-Source Input Capacitance

3.5

pF

f = 1MHz

Common-Source Reverse Transfer Capacitance

1

Equivalent Input Noise Voltage

4

nV/ Hz

f = 10kHz

MATCHING

Differential Gate-Source Voltage

7

10

20

mV

∆T

Gate-Source Voltage Differential Change with

Temperature

10

T = -55 to 25

10

T = 25 to 125

Saturation Drain Current Ratio

0.98

Transconductance Ratio

0.98

f= 1 kHz

CMRR

Common Mode Rejection Ratio

90

dB

NOTES: 1. For design aid only, not subject to production testing.

2. Pulse test; PW = 300

µs, duty cycle ≤ 3%.