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2SB975 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB975 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB975 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA ;IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -1 µA ICEO Collector cut-off current VCE=-50V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -5.0 mA hFE DC current gain IC=-3A ; VCE=-2V 2000 15000 |
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