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VNS1NV04D Datasheet(PDF) 4 Page - STMicroelectronics

Part # VNS1NV04D
Description  "OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNS1NV04D Datasheet(HTML) 4 Page - STMicroelectronics

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VNS1NV04D
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
(*) Pulsed: Pulse duration = 300
µs, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
gfs (*)
Forward
Transconductance
VDD=13V; ID=0.5A
2
S
COSS
Output Capacitance
VDS=13V; f=1MHz; VIN=0V
90
pF
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
td(on)
Turn-on Delay Time
VDD=15V; ID=0.5A
Vgen=5V; Rgen=RIN MINn=330Ω
(see figure 1)
70
200
ns
tr
Rise Time
170
500
ns
td(off)
Turn-off Delay Time
350
1000
ns
tf
Fall Time
200
600
ns
td(on)
Turn-on Delay Time
VDD=15V; ID=0.5A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
0.25
1.0
µs
tr
Rise Time
1.3
4.0
µs
td(off)
Turn-off Delay Time
1.8
5.5
µs
tf
Fall Time
1.2
4.0
µs
(dI/dt)on
Turn-on Current Slope
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MINn=330Ω
5.0
A/
µs
Qi
Total Input Charge
VDD=12V; ID=0.5A; VIN=5V
Igen =2.13mA (see figure 5)
5.0
nC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VSD (*)
Forward On Voltage
ISD=0.5A; VIN=0V
0.8
V
trr
Reverse Recovery Time
ISD=0.5A; dI/dt=6A/µs
VDD=30V; L=200µH
(see test circuit, figure 2)
205
ns
Qrr
Reverse Recovery Charge
100
µC
IRRM
Reverse Recovery Current
0.75
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Ilim
Drain Current Limit
VIN=5V; VDS=13V
1.7
3.5
A
tdlim
Step Response Current
Limit
VIN=5V; VDS=13V
2.0
µs
Tjsh
Overtemperature
Shutdown
150
175
200
°C
Tjrs
Overtemperature Reset
135
°C
Igf
Fault Sink Current
VIN=5V; VDS=13V; Tj=Tjsh
10
15
20
mA
Eas
Single Pulse
Avalanche Energy
starting Tj=25°C; VDD=24V
VIN=5V Rgen=RIN MINn=330Ω; L=50mH
(see figures 3 & 4)
55
mJ
2



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