T2500 Series

2

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.7

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

(Rated VDRM, Gate Open,TJ = 100°C)

IDRM

—

—

2

mA

Maximum On-State Voltage (Either Direction)*

(IT = 30 A Peak)

VTM

—

—

2

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 12 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

IGT

—

—

—

—

10

20

15

30

25

60

25

60

mA

Gate Trigger Voltage (Continuous dc) (All Quadrants)

(VD = 12 Vdc, RL = 12 Ohms)

(VD = VDROM, RL = 125 Ohms, TC = 100°C)

VGT

—

0.2

1.25

—

2.5

—

Volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 150 mA)

IH

—

15

30

mA

Gate Controlled Turn-On Time

(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs)

tgt

—

1.6

—

µs

Critical Rate-of-Rise of Commutation Voltage

(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms,

Gate Unenergized, TC = 80°C)

dv/dt(c)

—

10

—

V/

µs

Critical Rate-of-Rise of Off-State Voltage

(Rated VDRM, Exponential Voltage Rise,

Gate Open, TC = 100°C)

T2500B

T2500D,M,N

dv/dt

—

—

100

75

—

—

V/

µs

*Pulse Test: Pulse Width

p 300 µs, Duty Cycle p 2%.

QUADRANT DEFINITIONS

QUADRANT II

QUADRANT I

QUADRANT III

QUADRANT IV

MT2(+)

MT2(–)

MT2(+), G(–)

MT2(+), G(+)

MT2(–), G(–)

MT2(–), G(+)

G(–)

G(+)

ELECTRICAL CHARACTERISTICS of RECOMMENDED

BIDIRECTIONAL SWITCHES

USAGE

General

PART NUMBER

MBS4991

MBS4992

VS

6.0 – 10 V

7.5 – 9.0 V

IS

350

µA Max

120

µA Max

VS1 – VS2

0.5 V Max

0.2 V Max

Temperature

Coefficient

0.02%/

°C Typ

See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.