VT6T2 / EMT52

Datasheet

l

<For Tr1 and Tr2 in common>

Parameter

Symbol

Values

Unit

Collector-base voltage

-50

V

Collector-emitter voltage

-50

V

Emitter-base voltage

-5

V

Collector current

-100

mA

-200

mA

Power dissipation

VT6T2

150

mW

EMT52

150

Junction temperature

150

℃

Range of storage temperature

-55 to +150

℃

l

<For Tr1 and Tr2 in common>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

-50

-

-

V

Collector-emitter breakdown

voltage

-50

-

-

V

Emitter-base breakdown voltage

-5

-

-

V

Collector cut-off current

-

-

-0.1

μA

Emitter cut-off current

-

-

-0.1

μA

Collector-emitter saturation voltage

-

-0.15

-0.40

V

DC current gain

120

-

560

-

Transition frequency

f = 100MHz

-

300

-

MHz

Output capacitance

f = 1MHz

-

1.6

-

pF

*1 Pw=1ms Single Pulse

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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