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VT6X2 Datasheet(PDF) 2 Page - Rohm |
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VT6X2 Datasheet(HTML) 2 Page - Rohm |
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2 / 8 page ![]() VT6X2 / EMX52 Datasheet l lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA ICP*1 200 mA Power dissipation VT6X2 PD*2 *3 150 mW EMX52 150 Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50μA 50 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V Emitter-base breakdown voltage BVEBO IE = 50μA 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.1 μA Emitter cut-off current IEBO VEB = 5V - - 0.1 μA Collector-emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA - 0.10 0.30 V DC current gain hFE VCE = 6V, IC = 1mA 120 - 560 - Transition frequency fT VCE = 10V, IE = -10mA, f = 100MHz - 350 - MHz Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 1.6 - pF *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/7 20130905 - Rev.002 |
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