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CMSD2004S Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # CMSD2004S
Description  HIGH VOLTAGE SWITCHING DIODE
PDF  2 Pages
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CMSD2004S Datasheet(HTML) 1 Page - Central Semiconductor Corp

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Central
Semiconductor Corp.
TM
280
SOT-323 CASE
CMSD2004S
HIGH VOLTAGE
SWITCHING DIODE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMSD2004S
type is a silicon switching diode manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
The following configurations are available:
CMSD2004S
DUAL, IN SERIES
MARKING CODE: B6D
MAXIMUM RATINGS (TA=25°C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
240
V
Peak Repetitive Reverse Voltage
VRRM
300
V
Peak Repetitive Reverse Current
IO
200
mA
Continuous Forward Current
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp=1
ms
IFSM
4000
mA
Forward Surge Current, tp=1 s
IFSM
1000
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
QJA
500
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
BVR
IR=100mA
300
V
IR
VR=200V
-
nA
IR
VR=200V, TA=150°C
-
mA
IR
VR=240V
100
nA
IR
VR=240V, TA=150°C
100
mA
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
5.0
pF
trr
IF=IR=30mA, RECOV. TO 3.0mA,RL=100W
50
ns
NEW
SUPER
mini
SUPERTM


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