3–1

Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

• Collector–Emitter Saturation Voltage —

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

• Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc (Min) — TIP31A, TIP32A

• High Current Gain — Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

• Compact TO–220 AB Package

*MAXIMUM RATINGS

Rating

Symbol

TIP31A

TIP32A

TIP318

TIP32B

TIP31C

TIP32C

Unit

Collector–Emitter Voltage

VCEO

60

80

100

Vdc

Collector–Base Voltage

VCB

60

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

3.0

5.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

40

0.32

Watts

W/

_C

Total Power Dissipation

@ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Unclamped Inductive

Load Energy (1)

E

32

mJ

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Thermal Resistance, Junction to Case

R

θJC

3.125

_C/W

(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP31A/D

TIP31A

TIP31B

TIP31C

TIP32A

TIP32B

TIP32C

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 – 80 – 100 VOLTS

40 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

*

*

CASE 221A–06

TO–220AB

REV 1