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Motorola Bipolar Power Transistor Device Data

Complementary Silicon

High-Power Transistors

. . . for general–purpose power amplifier and switching applications.

• 25 A Collector Current

• Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V

• Excellent DC Gain — hFE = 40 Typ @ 15 A

• High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A,

f = 1.0 MHz

MAXIMUM RATINGS

Rating

Symbol

TIP35A

TIP36A

TIP35B

TIP36B

TIP35C

TIP36C

Unit

Collector–Emitter Voltage

VCEO

60 V

80 V

100 V

Vdc

Collector–Base Voltage

VCB

60 V

80 V

100 V

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak (1)

IC

25

40

Adc

Base Current — Continuous

IB

5.0

Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

125

1.0

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

Unclamped Inductive Load

ESB

90

mJ

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.0

_C/W

Junction–To–Free–Air Thermal Resistance

R

θJA

35.7

_C/W

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

v 10%.

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

0

125

0

25

175

75

100

75

100

50

125

25

150

50

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP35A/D

TIP35A

TIP35B

TIP35C

TIP36A

TIP36B

TIP36C

25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 – 100 VOLTS

125 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

*

*

CASE 340D–02

TO–218AC

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