CZT2000 datasheet(1/2 Pages) CENTRAL

Part #	CZT2000

Description	NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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CZT2000

SURFACE MOUNT

EXTREMELY HIGH VOLTAGE

NPN SILICON

DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT2000 type is

an NPN Epitaxial Planar Silicon darlington transistor

manufactured in an epoxy molded surface mount

package, designed for applications requiring extremely

high voltages and high gain capability.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

200

V

Collector-Emitter Voltage

VCES

200

V

Emitter-Base Voltage

VEBO

10

V

Continuous Collector Current

IC

600

mA

Power Dissipation

PD

2.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=180V

500

nA

IEBO

VBE=10V

100

nA

BVCES

IC=1.0mA

200

V

VCE(SAT)

IC=20mA, IB=25µA

0.9

V

VCE(SAT)

IC=80mA, IB=40µA

1.1

V

VCE(SAT)

IC=160mA, IB=100µA

1.2

V

VBE(ON)

VCE=5.0V, IC=160mA

2.0

V

hFE

VCE=5.0V, IC=100µA

3000

hFE

VCE=5.0V, IC=10mA

3000

hFE

VCE=5.0V, IC=160mA

3000

R6 (1-March 2010)

www.centra lsemi.com

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