MJE13001L-B-AB3-F-R datasheet(2/3 Pages) UTC

2 / 3 page

MJE13001

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-055.H

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCEO

400

Collector-Base Voltage

VCBO

600

Emitter Base Voltage

VEBO

Collector Current

200

Collector Power Dissipation

SOT-89

550

TO-92

750

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=100μA, IE=0

600

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA, IB=0

400

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA, IC=0

Base-Emitter Voltage

VBE

IE=100 mA

1.1

Collector Cutoff Cut-Off Current

ICBO

VCB=600V, IE=0A

100

μA

Collector Emitter Cut-Off Current

ICEO

VCE=400V, IB=0

200

μA

Emitter Cutoff Cut-Off Current

IEBO

VEB=7V, IC=0A

100

μA

ON CHARACTERISTICS

DC Current Gain

hFE1*

VCE=20 V, IC=20mA

hFE2

VCE=10V, IC=0.25mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=50mA, IB=10mA

0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=50mA, IB=10mA

1.2

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

IC=20mA,VCE=20V,f=1MHz

MHz

Resistive Load

Storage Time

IC=50mA, IB1=-IB2=5mA,

VCC=45V

1.5

μs

Fall Time

0.3

μs

CLASSIFICATION OF hFE1*

RANK

RANGE 10-15

15-20

20-25

25-30

30-35

35-40

40-45

45-50

50-55

55-60

60-65

65-70

MJE13001L-B-AB3-F-R Datasheet(PDF) 2 Page - Unisonic Technologies

MJE13001L-B-AB3-F-R Datasheet(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3

Datasheet Download

Link URL