MJE13009 datasheet(7/9 Pages) UTC

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MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

7 of 9

www.unisonic.com.tw

QW-R203-024,F

TYPICAL CHARATERISTICS

160

Fig. 3 Forward Bias Power Derating

0.6

Case Temperature, TC (°C)

140

100

0.4

0.8

Thermal

Derating

Second Breakdown

Derating

120

0.2

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown.

Safe operating area curves indicate IC -VCE limits of the transistor

that must be observed for reliable operation; i.e., the transistor

must not be subjected to greater dissipation than the curves

indicate.

The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable

depending on power level. Second breakdown pulse limits are

valid for duty cycles to 10% but must be derated when TC ≥ 25°C.

Second breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on Fig. 1 may

be found at any case temperature by using the appropriate curve

on Fig. 3.

TJ(PK) may be calculated from the data in Fig. 4. At high

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed

by second breakdown. Use of reverse biased safe operating

area data (Fig. 2) is discussed in the applications information

section.

Fig. 4 Typical Thermal Response [ZθJC(t)]

0.01

0.2

Time, t (ms)

0.05

0.3

0.01

0.02

0.2

0.7

0.07

0.1

0.5

0.1

D = 0.5

0.05

0.5

0.03

0.02

0.1

0.2

100

200

500

1.0k

Single Pulse

0.02

0.01

Duty Cycle, D = t1/t2

P(PK)

ZθJC(t) = r(t) θJC

θJC = 1.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(PK) – TC = P(PK) ZθJC(t)

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