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L8001G-R20-R Datasheet(PDF) 4 Page - Unisonic Technologies

Part # L8001G-R20-R
Description  FET BIAS CONTROLLER
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

L8001G-R20-R Datasheet(HTML) 4 Page - Unisonic Technologies

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L8001
Preliminary
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R502-938.a
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-0.6~8
V
Supply Current
ICC
100
mA
Maximum Drain Current
15
mA
Maximum CSUB Sink Current
-500
uA
Operating Temperature
TOPR
-40~80
°C
Storage Temperature
TSTG
-50~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(VCC=3.3V, ID=10mA, RCAL1=8.2KΩ, RCAL2=8.2KΩ, TA=25°C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Supply Voltage
VCC
3.3
6
V
Supply Current
ICC
No FET
10
mA
Negative Voltage
VSUB
ISUB=0uA, VCC=6V
-3.0
-2.5
-1
V
ISUB=-200uA
-1
V
Oscillator Freq.
fO
200
350
800
KHz
Drain Current
ID
8
10
12
mA
Drain Current Change with VCC
∆IDV
VCC=3.3~6V
0.2
%/V
VD1/VD2(VD3/VD4) Drain Offset
Current
∆IDC
0.2
mA
Drain Current Change with Temp.
∆IDT
T=-40~80°C
0.1
%/°C
Drain Voltage
VD
ID=10mA
1.8
2
2.2
V
Drain Voltage Change with VCC
∆VDV
VCC=3.3~6V
0.5
%/V
Drain Voltage Change
∆VDT
T=-40~80°C
50
ppm
Dynamic Gate Voltage Range
VG
Csub without loading
-2.5
0.7
V
Drain Output Noise Voltage
Vdn
With drain bypass capacitor=10nF
0.05
VPP
Gate Output Noise Voltage
VGN
With gate bypass capacitor=10nF
0.03
VPP



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