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C231F Datasheet(PDF) 1 Page - Digitron Semiconductors |
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C231F Datasheet(HTML) 1 Page - Digitron Semiconductors |
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1 / 4 page  DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130128 C230, C231 SERIES SILICON CONTROLLED RECTIFIER C230()3, C231()3 SERIES C232, C233 SERIES Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off state voltage(1) (TJ = -40 to +100°C) C230F, C231F, C230F3, C231F3, C232F, C233F C230A, C231A, C230A3, C231A3, C232A, C233A C230B, C231B, C230B3, C231B3, C232B, C233B C230C, C231C, C230C3, C231C3, C232C, C233C C230D, C231D, C230D3, C231D3, C232D, C233D C230E, C231E, C230E3, C231E3, C232E, C233E C230M, C231M, C230M3, C231M3, C232M, C233M VRRM, VDRM 50 100 200 300 400 500 600 Volts Peak non-repetitive reverse voltage (TJ = -40 to +100°C) C230F, C231F, C230F3, C231F3, C232F, C233F C230A, C231A, C230A3, C231A3, C232A, C233A C230B, C231B, C230B3, C231B3, C232B, C233B C230C, C231C, C230C3, C231C3, C232C, C233C C230D, C231D, C230D3, C231D3, C232D, C233D C230E, C231E, C230E3, C231E3, C232E, C233E C230M, C231M, C230M3, C231M3, C232M, C233M VRSM 75 150 300 400 500 600 720 Volts Forward current RMS IT(RMS) 25 Amps Peak surge current (one cycle, 60Hz, TC = -40 to +100°C) ITSM 250 Amps Circuit fusing considerations (TC = -40 to +100°C, t = 8.3ms) I2t 260 A2s Peak gate power PGM 5 Watts Average gate power PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Operating junction temperature range TJ -40 to +100 °C Storage temperature range Tstg -40 to +125 °C Mounting torque 30 In. lb. Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case Pressfit Isolated stud R ӨJC 1 1.15 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TC = 25°C TC = 100°C IDRM, IRRM - - - - 10 1 µA mA Forward “on” voltage (ITM = 100A peak, pulse width ≤ 1ms, duty cycle ≤ 2%) VTM - - 1.9 Volts |
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