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LM614IWM Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM614IWM Datasheet(HTML) 4 Page - National Semiconductor (TI) |
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4 / 28 page ![]() LM614 SNOSC21C – MAY 1998 – REVISED MARCH 2013 www.ti.com Electrical Characteristics (continued) These specifications apply for V − = GND = 0V, V+ = 5V, V CM = VOUT = 2.5V, IR = 100μA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25°C; limits in Boldface type apply over the Operating Temperature Range. Symbol Parameter Conditions Typ(1) LM614I Units LM614C Limits(2) R Resistance ΔV R(10→0.1 mA)/9.9 mA 0.2 0.56 Ω max 0.6 13 Ω max ΔV R(100→17 μA)/83 μA ΔVR V R Change V R(Vro = Vr) − VR(Vro = 5.0V) 2.5 7 mV max AVRO with High VRO (3.76V between Anode and FEEDBACK) 2.8 10 mV max V R Change with V R(V + = 5V) − VR(V + = 36V) 0.1 1.2 mV max V+ Change (V+ = 32V for LM614C) 0.1 1.3 mV max ΔVR ΔV+ VR(V + = 5V) − VR(V + = 3V) 0.01 1 mV max 0.01 1.5 mV max IFB FEEDBACK Bias Current V ANODE ≤ VFB ≤ 5.06V 22 50 nA max 29 55 nA max en Voltage Noise BW = 10 Hz to 10 kHz, VRO = VR 30 μV RMS 4 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: LM614 |
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