MN2510

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R214-020.a



°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

6

V

Collector Current

25

A

Base Current

5

A

°C)

Pc

125

W

Junction Temperature

150

°C

Storage Temperature

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Cut-Off Current

10

µA

Emitter Cut-Off Current

10

µA

Collector-Emitter Voltage

100

V

DC Current Gain (Note 1)

40

120

Collector-Emitter Saturation Voltage

1.5

V

Base- Emitter Saturation Voltage

1.8

V

Cut-Off Frequency

20

MHz

Output Capacitance

200

pF



RANK

R

O

40~80

60~120