MSD2N60 datasheet(2/9 Pages) BWTECH

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MSD2N60 600V N-Channel MOSFET

©Bruckewell Technology Corporation Rev. A -2012

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

––

2.87

RθJA

Junction-to-Ambient

––

50.0

℃

Electrical Characteristics

(Tc=25°C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min

Type

Max

Units

On Characteristics

VGS

Gate Threshold Voltage

VDS=VGS,ID=250μA

2.0

––

4.0

RDS(ON)

Static Drain-Source

On-Resistance

VGS=10V,ID=1.0A

––

4.0

4.7

Ω

Off Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0 V , ID=250μA

600

––

△BVDSS

/△TJ

Breakdown Voltage Temperature

Coefficient

ID=250μA, Referenced to 25℃

––

0.6

––

V/℃

VDS=600V , VGS= 0 V

––

μA

IDSS

Zero Gate Voltage Drain Current

VDS=480V , VC= 125℃

––

100

μA

IGSSF

Gate-Body Leakage Current,

Forward

VGS=30V , VDS=0 V

––

100

IGSSR

Gate-Body Leakage Current,

Reverse

VGS=-30V , VDS=0 V

––

–100

Dynamic Characteristics

Ciss

Input Capacitance

––

320

420

Coss

Output Capacitance

––

Crss

Reverse Transfer Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

––

4.5

6.0

Switching Characteristics

td(on)

Turn-On Time

––

Turn-On Rise Time

––

td(off)

Turn-Off Delay Time

––

Turn-Off Fall Time

VDS=300 V, ID=2A,

RG=25Ω

––

Total Gate Charge

––

9.5

Qgs

Gate-Source Charge

––

1.6

––

Qgd

Gate-Drain Charge

VDS=480V,ID=2A,

VGS=10 V

––

4.0

––

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