3N80Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-912.a

PARAMETER

SYMBOL

RATINGS

UNIT

800

V

800

V

Gate-Source Voltage

±20

V

30 (MIN)

V

Insulation Withstand Voltage (DC)

2500

V

Avalanche Current (Note 2)

3

A

Continuous Drain Current

3

A

Pulsed Drain Current

10

A

Single Pulse Avalanche Energy (Note 3)

170

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

25

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

5

°C/W