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2SC5027 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part # 2SC5027
Description  Silicon NPN triple diffusion planar transistor
PDF  5 Pages
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

2SC5027 Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd

  2SC5027 Datasheet HTML 1Page - Nell Semiconductor Co., Ltd 2SC5027 Datasheet HTML 2Page - Nell Semiconductor Co., Ltd 2SC5027 Datasheet HTML 3Page - Nell Semiconductor Co., Ltd 2SC5027 Datasheet HTML 4Page - Nell Semiconductor Co., Ltd 2SC5027 Datasheet HTML 5Page - Nell Semiconductor Co., Ltd  
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SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Page 2 of 5
www.nellsemi.com
ELECTRICAL CHARACTERISTICS (T = 25°C)
a
UNIT
µA
ton
VCE(sat)
IEBO
PARAMETER
Emitter cutoff current
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(Gain-Bandwidth product)
Fall time
ICBO
tstg
V
Collector cutoff current
Collector to emitter sustaining voltage
SYMBOL
VCEX(SUS)
VBE(sat)
fT
Turn-on time
Storage time
V
= 800V, l = 0
CB
E
l = 1.5A, L = 2mH,
C
l
= 0.3A,
BI
l
= -0.3A, clamped
B2
V
= 5V, l = 0
EB
C
l = 1.5A, l = 0.3A
C
B
l = 1.5A, l = 0.3A
C
B
V
= 10V, l = 0.2A
CE
C
MIN.
TYP.
l = 2A, l
= 0.4A, l
= -0.8A
C
B1
B2
V
= 400V, R = 200Ω
CC
L
CONDITIONS
µs
MHz
V
h
1
FE
DC current gain
h
2
FE
V
= 5V, I
CE
= 0.2A
C
Rank-N
Rank-R
Rank-O
V
= 5V, I
CE
= 1A
C
10
15
20
10
20
30
40
tf
0.3
3.0
0.5
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
Output capacitance
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
V
= 10V, f= 1MHz,
CB
l = 0
E
l = 1mA, l = 0
C
E
l = 5mA, I = 0
C
B
l = 1mA, I = 0
E
C
850
800
7
60
MAX.
VALUE
10
10
800
2
1.5
15
pF
V
2SC5027 Series
R
-
A
5027
2SC
Current & Voltage rating, I & V
C
CEO
DC current gain rank, h
1
FE
ORDERING INFORMATION SCHEME
Transistor series
Package type
A = TO-220AB
AF = TO-220F
N = 10 ~ 20
R = 15 ~ 30
O = 20 ~ 40
NPN Type
3A / 800V



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