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19N10VG-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 19N10VG-TN3-R
Description  100V N-Channel MOSFET
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

19N10VG-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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19N10V
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-914, A
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
± 25
V
Continuous Drain Current
ID
15.6
A
Pulsed Drain Current (Note 2)
IDM
62.4
A
Avalanche Current (Note 2)
IAR
15.6
A
Single Pulsed Avalanche Energy (Note 3)
EAS
220
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.0
V/ns
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
L=1.35mH, IAS=15.6A, VDD=25V, RG=25 Ω, Starting TJ=25°C
ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
50
°C/W
Junction to Case
θJC
2.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
100
V
Breakdown Voltage Temperature
Coefficient
∆BVDSS/∆TJ
ID=250µA,
Referenced to 25°C
0.1
V/°C
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=25V, VDS=0V
100
nA
Reverse
VGS=-25V, VDS=0V
-100
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
3.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=7.8A
0.078
0.1
Ω
Forward Transconductance
gFS
VDS=40V, ID=7.8A (Note 1)
11
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
600
780
pF
Output Capacitance
COSS
165
215
pF
Reverse Transfer Capacitance
CRSS
32
40
pF



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