UT90N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-847.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

90

A

28.8

A

Pulsed

90

A

Avalanche Current Pulse (L=0.074mH)

90

A

Single Pulsed Avalanche Energy (L=0.074mH)

300

mJ

Continuous Source-Drain Diode

Current

90

A

3.13

A

Power Dissipation

(Note 2)

TO-251/TO-252

187

W

TO-263

220

3.75

W

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Surface Mounted on 1"x1" FR4 board.

4. t=10sec.

5. Calculated based on maximum junction temperature. Package limitation current is 90A.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

(Note 1, 2)

t≤10sec

40

°C/W

Junction to Case

Steady State

TO-251/TO-252

0.6

°C/W

TO-263

0.5

Notes: 1. Maximum under Steady State conditions is 90°C/W.

2. Surface Mounted on 1" x1" FR4 board.