DS30301 Rev. 2 - 2

2 of 3

2N7002T

www.diodes.com

Electrical Chacteristics

°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 1)

Drain-Source Breakdown Voltage

60

¾¾

V

mA

Zero Gate Voltage Drain Current

¾¾

1.0

500

µA

Gate-Body Leakage

¾¾

±10

nA

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

1.0

¾

2.0

V

mA

Static Drain-Source On-Resistance

¾

2.0

4.4

7.5

13.5

W

On-State Drain Current

0.5

1.0

¾

A

Forward Transconductance

80

¾¾

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

¾

22

50

pF

f = 1.0MHz

Output Capacitance

¾

11

25

pF

Reverse Transfer Capacitance

¾

2.0

5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

¾

7.0

20

ns

W

Turn-Off Delay Time

¾

11

20

ns

Note: 1. Short duration test pulse used to minimize self-heating effect.

0

0.2

0.1

0.4

0.3

0.5

0.6

0.7

0.8

0.9

1

01

2

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 On-Region Characteristics

V

= 10,7,6V

GS

V= 5V

GS

V= 4V

GS

V= 3V

GS

0.6

1

1.4

1.8

00.2

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current

V= 3V

GS

V= 4V

GS

V

= 5, 6, 7, 10V

GS

2.2

0.4

0.6

0.8

1.0

0.7

0.8

0.9

1.1

1

1.2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE (

°C)

J

Fig. 3 Gate Threshold Variation with Temperature

0.4

0.8

0.6

1.2

1.8

1.6

1.4

1

2.2

2

-50

-25

025

50

75

100

125

150

T , JUNCTION TEMPERATURE (

°C)

J

Fig. 4 On-Resistance Variation with Temperature

V

= 10V

GS

I = 500mA

D