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MBR20100CT Datasheet(PDF) 1 Page - Diodes Incorporated |
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MBR20100CT Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page ![]() D S30019 Rev. C-2 1 of 2 MBR2070CT-MBR20100CT MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features L M A N P D E K C B G 12 3 J HH Pin 1 Pin 3 Pin 2 Case TO-220AB Dim Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E ¾ 6.35 G 12.70 14.73 H 2.29 2.79 J 0.51 1.14 K 3.53 Æ 4.09Æ L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications · Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data · Case: Molded Plastic · Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 · Polarity: As Marked on Body · Weight: 2.24 grams (approx) · Mounting Position: Any · Marking: Type Number Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBR 2070CT MBR 2080CT MBR 2090CT MBR 20100CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 V Average Rectified Output Current (Note 1) @ TC = 125 °C IO 20 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage Drop @ IF = 10A, Tj = 125 °C @ IF = 10A, Tj = 25 °C @ IF = 20A, Tj = 125 °C @ IF = 20A, Tj = 25 °C VFM 0.75 0.85 0.85 0.95 V Peak Reverse Current @TA = 25 °C at Rated DC Blocking Voltage @ TA = 125 °C IRM 0.15 150 mA Typical Junction Capacitance (Note 2) Cj 1000 pF Typical Thermal Resistance Junction to Case (Note 1) RqJc 2.0 °C/W Voltage Rate of Change dV/dt 10000 V/ ms Operating and Storage Temperature Range Tj TSTG -65 to +150 -65 to +175 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC. |
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