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APT30SCD120B Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT30SCD120B Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 4 page  PRODUCT BENEFITS • Higher Reliability Systems • Minimizes or eliminates snubber PRODUCT FEATURES • Zero Recovery Times (trr) • Popular TO-247 Package or surface mount D3PAK package • Low Forward Voltage • Low Leakage Current PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction (PFC) APT30SCD120B APT30SCD120S 1200V 30A MAXIMUM RATINGS T C = 25°C unless otherwise specified. Microsemi Website - http://www.microsemi.com Zero Recovery Silicon Carbide Schottky Diode Symbol Characteristic / Test Conditions Ratings Unit V R Maximum D.C. Reverse Voltage 1200 Volts V RRM Maximum Peak Repetitive Reverse Voltage V RWM Maximum Working Peak Reverse Voltage I F Maximum D.C. Forward current T C = 25°C 99 Amps T C = 135°C 29 I FRM Repetitive Peak Forward Suge Current (T J = 45°C, t p = 10ms, Half Sine Wave) 150 I FSM Non-Repetitive Forward Surge Current (T J = 25°C, t p = 10ms, Half Sine) 330 P tot Power Dissipation T C = 25°C 291 W T C = 125°C 93 T J, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C T L Lead Temperature for 10 Seconds 300 Symbol Characteristic / Test Conditions Min Typ Max Unit V F Forward Voltage I F = 30A TJ = 25°C 1.5 1.8 Volts I F = 30A, TJ = 150°C 2.1 I RM Maximum Reverse Leakage Current V R = 1200V TJ = 25°C 600 μA V R = 1200V, TJ = 150°C 3000 Q c Total Capactive Charge V R = 800V, IF = 30A, di/dt = -100A/μs, TJ = 25°C 200 nC C T Junction Capacitance V R = 0V, TJ = 25°C, f = 1MHz 2100 pF Junction Capacitance V R = 200V, TJ = 25°C, f = 1MHz 228 Junction Capacitance V R = 400V, TJ = 25°C, f = 1MHz 167 STATIC ELECTRICAL CHARACTERISTICS 1 - Cathode 2 - Anode Back of Case - Cathode TO -24 7 1 2 D3PAK 1 2 |
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