MMBTA06 datasheet(1/2 Pages) DIODES

Part #	MMBTA06

Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	2 Pages

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Manufacturer	DIODES [Diodes Incorporated]

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1 / 2 page

DS30037 Rev. C-2

1 of 2

MMBTA05 / MMBTA06

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary PNP Types Available

(MMBTA55 / MMBTA56)

·

Ideal for Medium Power Amplification and

Switching

Characteristic

Symbol

MMBTA05

MMBTA06

Unit

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

4.0

V

Collector Current - Continuous (Note 1)

IC

500

mA

Power Dissipation (Note 1)

Pd

350

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

357

K/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

M

B

C

H

G

D

K

TOP VIEW

C

E

B

Mechanical Data

·

Case: SOT-23, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

MMBTA05 Marking: K1G, K1H, R1H

·

MMBTA06 Marking: K1G, R1G

·

Weight: 0.008 grams (approx.)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.19

1.40

C

2.10

2.50

D

0.89

1.05

E

0.45

0.61

G

1.78

2.05

H

2.65

3.05

J

0.013

0.15

K

0.89

1.10

L

0.45

0.61

M

0.076

0.178

All Dimensions in mm

Note:

1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width

£ 300ms, duty cycle £ 2%.

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

MMBTA05

MMBTA06

V(BR)CBO

60

80

¾

V

IC = 100

mA, IE = 0

Collector-Emitter Breakdown Voltage

MMBTA05

MMBTA06

V(BR)CEO

60

80

¾

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

4.0

¾

V

IE = 100

mA, IC = 0

Collector Cutoff Current

MMBTA05

MMBTA06

ICBO

¾

100

nA

VCB = 60V, IE = 0

VCB = 80V, IE = 0

Collector Cutoff Current

MMBTA05

MMBTA06

ICES

¾

100

nA

VCE = 60V, IBO = 0V

VCE = 80V, IBO = 0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

100

¾¾

IC = 10mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

0.25

V

IC = 100mA, IB = 10mA

Base- Emitter Saturation Voltage

VBE(SAT)

¾

1.2

V

IC = 100mA, VCE = 1.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

100

¾

MHz

VCE = 2.0V, IC = 10mA,

f = 100MHz

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