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DF754 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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DF754 Datasheet(HTML) 2 Page - Dynex Semiconductor |
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2 / 9 page  DF754 2/9 SURGE RATINGS Conditions Max. Units 8.0 kA 320 x 103 A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM Parameter Symbol 10ms half sine; with 0% V RRM, Tj = 150 oC -kA -A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM 10ms half sine; with 50% V RRM, Tj = 150 oC -kA -A 2s I 2t for fusing I 2t Surge (non-repetitive) forward current I FSM 10ms half sine; with 100% V RRM, Tj = 150 oC THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W - 0.069 Anode dc Clamping force 15kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.01 Double side - Single side Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter - 0.02 oC/W oC/W Cathode dc - 0.076 oC/W Double side cooled - 0.036 oC/W T stg Storage temperature range -55 175 oC kN 16.5 13.5 Clamping force - T vj Virtual junction temperature On-state (conducting) - 150 oC Min. |
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