SMG2307PE datasheet(2/4 Pages) SECOS

2 / 4 page

SMG2307PE

-5.2 A, -20 V, RDS(ON) 31 mΩ

Ω

P-Channel Enhancement MOSFET

Elektronische Bauelemente

22-Oct-2012 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Static

Gate-Threshold Voltage

VGS(th)

-0.3

-0.55

VDS = VGS, ID = -250µA

Gate-Body Leakage

IGSS

±10

µA

VDS = 0V, VGS= ±10V

Zero Gate Voltage Drain Current

IDSS

-1

µA

VDS = -16V, VGS= 0V

-10

VDS = -16V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(ON)

-10

VDS = -5V, VGS= -4.5V

Drain-Source On-Resistance

RDS(ON)

VGS= -4.5V, ID = -4.2A

VGS= -2.5V, ID = -3.5A

VGS= -1.8V, ID = -3.1A

VGS= -1.5V, ID = -2.6A

Forward Transconductance

gFS

VDS= -10V,,ID = -4.2A

Diode Forward Voltage

VSD

-0.7

IS= -0.95A, VGS=0

Dynamic

Input Capacitance

Ciss

826

VDS= -15V

VGS=0

f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

ID= -4.2A

VDS= -10V

VGS= -4.5V

Gate-Source Charge

Qgs

4.8

Gate-Drain Charge

Qgd

3.1

Turn-On Delay Time

Td(ON)

ID= -4.2A,

RL=2.4

VDS= -10V

VGEN= -4.5V

RGEN= 6

Rise Time

163

Turn-Off Delay Time

Td(OFF)

785

Fall Time

397

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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