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2SC4115-R Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4115-R Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 20-Mar-2012 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) CLASSIFICATION OF hFE(1) Product-Rank 2SC4115-Q 2SC4115-R 2SC4115-S Range 120~270 180~390 270~560 Marking 4115Q 4115R 4115S PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 3 A Collector Power Dissipation PC 500 mW Junction & Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V(BR)CBO 40 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 - - V IE=50µA, IC=0 Collector Cut-Off Current ICBO - - - 0.1 µ A VCB=30V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µ A VEB=5V, IC=0 DC Current Gain hFE 120 - 560 VCE=2V, IC=100mA Collector-Emitter Saturation voltage VCE(sat) - - 0.5 V IC=2A, IB=100mA Transition Frequency fT 200 290 - MHz VCE=2V,IC=500mA,f=100MHz Package MPQ Leader Size SOT-89 1K 7 inch SOT-89 A E C D B K H F G L J 1 2 3 4 B C E REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.25 2.60 K 0.32 0.52 E 1.50 1.85 L 0.35 0.44 F 0.89 1.20 |
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Similar Description - 2SC4115-R |
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