BAV199DW datasheet(1/1 Pages) SECOS

Part #	BAV199DW

Description	Switching Diode Plastic-Encapsulate Diode

PDF	1 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 1 page

BAV199DW

Switching Diode Plastic-Encapsulate Diode

Elektronische Bauelemente

26-Mar-2012 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Surface Mount Package Ideally Suited For

Automatic Insertion.

Very Low Leakage Current.

MARKING：

：

K52

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

85

V

DC Reverse Voltage

VR

85

V

Forward Continuous Current

IFM

160

mA

Surge Current

T=1µs

IFSM

4

A

T=10ms

1

T=1s

0.5

Power Dissipation

PD

200

mW

Junction & Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)

85

-

V

IR=100µA

Reverse Voltage Leakage Current

IR

-

5

nA

VR=75V

Collector-Emitter Saturation Voltage

VF

-

0.9

V

IF=1mA

-

1

IF=10mA

-

1.1

IF=50mA

-

1.25

IF=150mA

Junction Capacitance

CJ

-

2

-

pF

VR=0, f=1MHz

Reverse Recovery Time

TRR

-

3

µs

IF=IR=10mA,

IRR=0.1 x IR, RL=100

Package

MPQ

Leader Size

SOT-363

3K

7 inch

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.00

2.20

G

0.100 REF.

B

2.15

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.15

D

0.90

1.10

K

8°

E

1.20

1.40

L

0.650 TYP.

F

0.15

0.35

SOT-363

B

L

F

H

C

J

D G

K

A

E

1

2

3

6

5

4

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