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ESM412008 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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ESM412008 Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 8 page ![]() ESM4120 3/8 t rr 100 Symbol Typ. Units Parameter V FM Forward voltage I RRM Peak reverse current Reverse recovery time Q RA1 Recovered charge (50% chord) I RM Reverse recovery current K Soft factor V TO Threshold voltage r T Slope resistance V FRM Forward recovery voltage di/dt = 1000A/ µs, T j = 125 oC- 25 V At T vj = 125 oC - 1.0 m Ω At T vj = 125 oC - 1.25 V -- - -34 A -15 µC 0.8 - µs At V RRM, Tcase = 125 oC- mA At 450A peak, T case = 25 oC - 1.7 V Conditions Max. I F = 200A, diRR/dt = 50A/µs T case = 125 oC, V R = 100V DEFINITION OF K FACTOR AND Q RA1 0.5x I RR I RR dI R/dt t 1 t 2 τ Q RA1 = 0.5x IRR(t1 + t2) k = t 1/t2 CHARACTERISTICS |
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